JPH0435907B2 - - Google Patents
Info
- Publication number
- JPH0435907B2 JPH0435907B2 JP6992286A JP6992286A JPH0435907B2 JP H0435907 B2 JPH0435907 B2 JP H0435907B2 JP 6992286 A JP6992286 A JP 6992286A JP 6992286 A JP6992286 A JP 6992286A JP H0435907 B2 JPH0435907 B2 JP H0435907B2
- Authority
- JP
- Japan
- Prior art keywords
- branch
- conductive layer
- misalignment
- contact hole
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 10
- 239000011295 pitch Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6992286A JPS62226639A (ja) | 1986-03-28 | 1986-03-28 | 半導体装置の合せずれ検出方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6992286A JPS62226639A (ja) | 1986-03-28 | 1986-03-28 | 半導体装置の合せずれ検出方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62226639A JPS62226639A (ja) | 1987-10-05 |
| JPH0435907B2 true JPH0435907B2 (en]) | 1992-06-12 |
Family
ID=13416665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6992286A Granted JPS62226639A (ja) | 1986-03-28 | 1986-03-28 | 半導体装置の合せずれ検出方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62226639A (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3552077B2 (ja) * | 1996-07-26 | 2004-08-11 | ソニー株式会社 | 合わせずれ測定方法及び合わせずれ測定パターン |
| JP6015898B2 (ja) * | 2012-03-30 | 2016-10-26 | 株式会社ソシオネクスト | 半導体装置用試験素子 |
-
1986
- 1986-03-28 JP JP6992286A patent/JPS62226639A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62226639A (ja) | 1987-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |